Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
نویسندگان
چکیده
We examine room temperature band-to-band tunneling in 2D InAs/3D GaSb heterostructures. Specifically, multi-subband, gate-controlled negative differential resistance is observed in InAs/ AlSb/GaSb junctions. Due to spatial confinement in the 10 nm-thick InAs layer, tunneling contributions from two distinct subbands are observed as sharp steps in the current-voltage characteristics. It is shown that the relative position of the steps can be controlled via external gate bias. Additionally, the extracted separation in the subband energy agrees well with the calculated values. This is the first demonstration of a gate controlled tunneling diode with multiple subband contributions. VC 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4812563]
منابع مشابه
Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nmthin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-n...
متن کاملOn the effect of the barrier widths in the InAs/AlSb/GaSb singlebarrier interband tunneling structures
Articles you may be interested in Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes Appl. Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature The dependence of the interband tunneling current on A...
متن کاملBand hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells
We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...
متن کاملResonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures
We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...
متن کاملTunnel switch diode based on AlSbÕGaSb heterojunctions
We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic ‘‘S’’ shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barr...
متن کامل